Room temperature operation of InxGa1-xSb/InAs type-II quantum well infrared photodetectors grown by MOCVD
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Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection
The authors report on investigation of type-II InAs/GaSb and InAs/InxGa1−xSb strained layer superlattices SLSs for long-wave infrared detection. Growth conditions were optimized to obtain nearly lattice matched a /a 0.03% 13 ML InAs/7 ML GaSb SLS nBn detector structure with cutoff wavelength of 8.5 m 77 K . Dark current density was equal to 3.2 10−4 A /cm2 Vb =+50 mV, 77 K for this detector str...
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